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BD136/138/140

BD136/138/140

Medium Power Linear and Switching

Applications

鈥?Complement to BD135, BD137 and BD139 respectively

1

TO-126

2.Collector

3.Base

1. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

Collector-Base Voltage

Parameter

: BD136

: BD138

: BD140

: BD136

: BD138

: BD140

Value

- 45

- 60

- 80

- 45

- 60

- 80

-5

- 1.5

- 3.0

- 0.5

12.5

1.25

150

- 55 ~ 150

Units

V

V

V

V

V

V

V

A

A

A

W

W

擄C

擄C

V

CEO

Collector-Emitter Voltage

V

EBO

I

C

I

CP

I

B

P

C

P

C

T

J

T

STG

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

Collector Dissipation (T

C

=25擄C)

Collector Dissipation (T

a

=25擄C)

Junction Temperature

Storage Temperature

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

V

CEO

(sus)

Parameter

* Collector-Emitter Sustaining Voltage

: BD136

: BD138

: BD140

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

Test Condition

I

C

= - 30mA, I

B

= 0

Min.

- 45

- 60

- 80

- 0.1

- 10

25

25

40

Typ.

Max.

Units

V

V

V

碌A(chǔ)

碌A(chǔ)

I

CBO

I

EBO

h

FE1

h

FE2

h

FE3

V

CE

(sat)

V

BE

(on)

V

CB

= - 30V, I

E

= 0

V

EB

= - 5V, I

C

= 0

V

CE

= - 2V, I

C

= - 5mA

V

CE

= - 2V, I

C

= - 0.5A

V

CE

= - 2V, I

C

= - 150mA

I

C

= - 500mA, I

B

= - 50mA

V

CE

= - 2V, I

C

= - 0.5A

250

- 0.5

-1

V

V

* Collector-Emitter Saturation Voltage

* Base-Emitter ON Voltage

* Pulse Test: PW=350碌s, duty Cycle=2% Pulsed

h

FE

Classificntion

Classification

h

FE3

6

40 ~ 100

10

63 ~ 160

16

100 ~ 250

漏2000 Fairchild Semiconductor International

Rev. A, February 2000

next

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