MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Amplifier Transistors
Order this document
by BDB01C/D
NPN Silicon
COLLECTOR
3
2
BASE
BDB01C,D
1
2
1
EMITTER
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation
@ TA = 25擄C
Derate above 25擄C
Total Device Dissipation
@ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCES
VEBO
IC
PD
BDB01C
80
80
5.0
0.5
1.0
8.0
2.5
20
鈥?55 to +150
BDB01D
100
100
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/擄C
Watt
mW/擄C
擄C
CASE 29鈥?5, STYLE 1
TO鈥?2 (TO鈥?26AE)
PD
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Voltage
(IC = 10 mA, IB = 0)
Collector Cutoff Current
(VCB = 80 V, IE = 0)
(VCB = 100 V, IE = 0)
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
V(BR)CEO
BDB01C
BDB01D
ICBO
BDB01C
BDB01D
IEBO
鈥?/div>
鈥?/div>
鈥?/div>
0.01
0.01
100
nAdc
80
100
鈥?/div>
鈥?/div>
Vdc
m
Adc
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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