Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
PNP COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
BCY77, BCY78
BCY79
TO-18
Complementary BCY58/59
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
BCY77
BCY78
BCY79
UNIT
V
V
V
mA
mA
mW
W
deg C
VCEO
60
32
45
Collector -Emitter Voltage
VCES
60
32
45
Collector -Emitter Voltage
VEBO
5.0
5.0
5.0
Emitter -Base Voltage
IC
100
200
200
Collector Current Continuous
IB
50
50
50
Base Current Continuous
PD
600
Power Dissipation@ Ta=25 degC
1.0
@ TC=45 deg C
Tj, Tstg
-65 to +200
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Rth(j-a)
450
Junction to Ambient in Free Air
Rth(j-c)
150
Junction to Case
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
BCY77 BCY78
VCEO
IC=2mA,IB=0
>60
>32
Collector -Emitter Voltage
VCES
IC=10uA, VBE=0
>60
>32
Collector -Emitter Voltage
VEBO
IE=1uA, IC=0
>5.0
>5.0
Emitter-Base Voltage
ICES
VCE=VCE max,VBE=0
<100
<100
Collector-Cut off Current
VCE=50V, VBE=0
<20
-
VCE=25V, VBE=0
-
<20
VCE=35V, VBE=0
-
-
TA=150 deg C
VCE=60V, VBE=0
VCE=25V, VBE=0
VCE=35V, VBE=0
ICEX
VCE=VCE, max
VBE=0.2V, Ta=100 deg C
IEBO
VEB=4V, IC=0
VBE(on) IC=10uA, VCE=5V
IC=2mA, VCE=5V
IC=10mA,VCE=1V
IC=50mA,VCE=1V (2)
IC=100mA,VCE=1V (1)
K/W
K/W
BCY79 UNIT
>45
V
>45
V
>5.0
V
<100
nA
.-
nA
-
nA
<20
nA
<10
-
-
<20
<20
-
<10
-
<20
<20
TYP 0.55
0.6 to 0.75
TYP 0.68
TYP 0.72
TYP 0.75
.-
-
<10
<20
<20
uA
uA
uA
uA
nA
V
V
V
V
V
Emitter Cut off Current
Base Emitter on Voltage
Continental Device India Limited
Data Sheet
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