DATA SHEET
BCY78, VII, VIII, IX, X
BCY79, VII, VIII, IX, X
PNP SILICON TRANSISTOR
JEDEC TO-18 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR BCY78, BCY79 Series types are Silicon PNP Epitaxial Planar Transistors,
mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
MAXIMUM RATINGS (TA=25擄C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Collector Current (Peak)
ICM
Base Current (Peak)
IBM
Power Dissipation
PD
Power Dissipation(TC=25擄C)
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
螛
JA
Thermal Resistance
螛
JC
ELECTRICAL CHARACTERISTICS (TA=25擄C unless otherwise noted)
SYMBOL
TEST CONDITIONS
ICBO
VCB= Rated VCBO
ICBO
VCB= Rated VCBO, TA=150擄C
IEBO
VEB=5.0V
BVCBO
IC=10碌A(chǔ) (BCY78)
BVCBO
IC=10碌A(chǔ) (BCY79)
BVCEO
IC=2.0mA (BCY78)
BVCEO
IC=2.0mA (BCY79)
BVEBO
IE=1.0碌A(chǔ)
VCE(SAT)
IC=10mA, IB=250碌A(chǔ)
VCE(SAT)
IC=100mA, IB=2.5mA
VBE(SAT)
IC=10mA, IB=250碌A(chǔ)
VBE(SAT)
IC=100mA, IB=2.5mA
VBE(ON)
VCE=5.0V, IC=2.0mA
BCY78-VII
BCY79-VII
MIN
MAX
140 TYP
120
220
80
40
BCY78-VIII
BCY79-VIII
MIN
MAX
30
180
310
120
400
45
BCY78
32
32
5.0
100
200
200
340
1.0
-65 to +200
450
150
MIN
MAX
15
10
20
BCY79
45
45
UNITS
V
V
V
mA
mA
mA
mW
W
擄C
擄C/W
擄C/W
UNITS
nA
碌A(chǔ)
nA
V
V
V
V
V
V
V
V
V
V
32
45
32
45
5.0
0.25
0.80
0.85
1.20
0.75
BCY78-X
BCY79-X
MIN
MAX
100
380
630
240
1000
60
0.60
0.70
0.60
BCY78-IX
BCY79-IX
MIN
MAX
40
250
460
160
630
60
SYMBOL
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCE=5.0V, IC=10碌A(chǔ)
VCE=5.0V, IC=2.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=100mA
(SEE REVERSE SIDE)
R3
1
2
