SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 鈥?FEBRUARY 1996
7
C
BCX54-16 鈥?BD
BCX55-16 鈥?BM
BCX56-16 鈥?BL
PARTMARKING DETAILS:-
BCX54 鈥?BA
BCX54-10 鈥?BC
BCX55 鈥?BE
BCX55-10 鈥?BG
BCX56 鈥?BH
BCX56-10 鈥?BK
COMPLEMENTARY TYPES:-
BCX54 鈥?BCX51
BCX55 鈥?BCX52
BCX54
BCX55
BCX56
E
C
BCX56 鈥?BCX53
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
BCX54
45
45
BCX55
60
60
5
2
1
1
-65 to +150
BCX56
100
80
UNIT
V
V
V
A
A
W
擄C
Operating and Storage Temperature Range T
j
:T
stg
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
BCX54
BCX55
BCX56
BCX54
BCX55
BCX56
SYMBOL
V
(BR)CBO
MIN. TYP. MAX. UNIT CONDITIONS.
45
60
100
45
60
80
5
0.1
20
20
0.5
1.0
25
40
25
63
100
150
15
250
160
250
V
I
C
=100碌A(chǔ)
V
(BR)CEO
V
V
碌A(chǔ)
碌A(chǔ)
nA
V
V
I
C
=10mA*
I
E
=10碌A(chǔ)
V
CB
=30V
V
CB
=30V, T
amb
=150擄C
V
EB
=4V
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=2V*
I
C
=5mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V
(BR)EBO
I
CBO
I
EBO
V
BE(on)
h
FE
鈥?0
鈥?6
Collector-Emitter Saturation Voltage V
CE(sat)
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
MHz I
C
=50mA, V
CE
=10V,
f=100MHz
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300碌s. Duty cycle
鈮?%
3 - 35
1
