BCX54
BCX55
BCX56
SURFACE MOUNT
NPN SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX54,
BCX55, and BCX56 types are NPN Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high current general
purpose amplifier applications.
SOT-89 CASE
MAXIMUM RATINGS
(TA=25擄C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Peak Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ,Tstg
螛
JA
BCX54
45
45
BCX55
60
60
5.0
1.0
1.5
100
200
1.2
-65 to +150
104
BCX56
100
80
UNITS
V
V
V
A
A
mA
mA
W
擄C
擄C/W
ELECTRICAL CHARACTERISTICS:
(TA=25擄C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=30V
ICBO
VCB=30V, TA=125擄C
IEBO
VEB=5.0V
BVCBO
IC=100碌A(chǔ) (BCX54)
45
BVCBO
IC=100碌A(chǔ) (BCX55)
60
BVCBO
IC=100碌A(chǔ) (BCX56)
100
BVCEO
IC=10mA (BCX54)
45
BVCEO
IC=10mA (BCX55)
60
BVCEO
IC=10mA (BCX56)
80
VCE(SAT)
IC=500mA, IB=50mA
VBE(ON)
VCE=2.0V, IB=500mA
hFE
VCE=2.0V, IC=5.0mA
63
hFE
VCE=2.0V, IC=150mA
63
hFE
VCE=2.0V, IC=150mA
(BCX54-10, BCX55-10, BCX56-10)
63
hFE
VCE=2.0V, IC=150mA
(BCX54-16, BCX55-16, BCX56-16) 100
hFE
VCE=2.0V, IC=500mA
40
fT
VCE=5.0V, IC=10mA, f=100MHz
130
MAX
100
10
100
0.5
1.0
250
160
250
UNITS
nA
碌A(chǔ)
nA
V
V
V
V
V
V
V
V
MHz
R1 ( 18-December 2001)
1
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