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NPN SILICON PLANAR MEDIUM

POWER DARLINGTON TRANSISTORS

ISSUE 1 聳 MARCH 94

FEATURES

* 60 Volt V

CEO

* Gain of 10K at I

C

=0.5 Amp

* P

tot

=1 Watt

BCX38A/B/C

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25擄C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

80

60

10

2

E-Line

TO92 Compatible

VALUE

UNIT

V

V

V

A

mA

W

擄C

800

1

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25擄C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Turn-on Voltage

Static

Forward

Current

Transfer

Ratio

BCX38A

BCX38B

BCX38C

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(on)

h

FE

500

1000

2000

4000

5000

10000

3-20

MIN.

80

60

10

100

100

1.25

1.8

TYP.

MAX.

V

V

V

nA

nA

V

V

UNIT CONDITIONS.

I

C

=10

碌

A, I

E

=0

I

C

=10mA, I

B

=0

I

E

=10

碌

A, I

C

=0

V

CB

=60V, I

E

=0

V

EB

=8V, I

C

=0

I

C

=800mA, I

B

=8mA*

I

C

=800mA, V

CE

=5V*

I

C

=100mA, V

CE

=5V*

I

C

=500mA, V

CE

=5V*

I

C

=100mA, V

CE

=5V*

I

C

=500mA, V

CE

=5V*

I

C

=100mA, V

CE

=5V*

I

C

=500mA, V

CE

=5V*

next

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