BCW68G
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Mounting Pad Layout
Pin Configuration
1.
Base
2.
Emitter
3.
Collector
0.031 (0.8)
1
2
max. .004 (0.1)
0.035 (0.9)
0.079 (2.0)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Features
Dimensions in inches and (millimeters)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking Code:
DG
Packaging Codes/Options:
E8/10K per 13鈥?reel (8mm tape), 30K/box
E9/3K per 7鈥?reel (8mm tape), 30K/box
Ratings at 25擄C ambient temperature unless otherwise specified.
鈥?PNP Silicon Epitaxial Planar Transistors
鈥?Suited for low level, low noise, low frequency
applications in hybrid cicuits.
鈥?Low Current, Low Voltage.
鈥?As complementary type, BCW66G NPN
transistor is recommended.
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Base Current (DC)
Peak Base Current
Power Dissipation, T
S
= 79擄C
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Soldering Point
Note:
(1) Mounted on FR-4 printed-ciruit board.
Symbol
鈥揤
CEO
鈥揤
CBO
鈥揤
EBO
鈥揑
C
鈥揑
CM
鈥揑
B
鈥揑
BM
P
tot
T
j
T
STG
R
胃JA
R
胃JS
Value
45
60
5.0
800
1.0
100
200
330
150
鈥?5 to +150
鈮?/div>
285
(1)
鈮?/div>
215
Unit
V
V
V
mA
A
mA
mA
mW
擄C
擄C
擄C/W
擄C/W
Document Number 88173
09-May-02
www.vishay.com
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