BCW66G
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (NPN)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Mounting Pad Layout
0.031 (0.8)
Pin Configuration
1.
Base
2.
Emitter
3.
Collector
0.035 (0.9)
0.079 (2.0)
1
2
max. .004 (0.1)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking Code:
EG
Packaging Codes/Options:
E8/10K per 13鈥?reel (8mm tape), 30K/box
E9/3K per 7鈥?reel (8mm tape), 30K/box
Features
鈥?NPN Silicon Epitaxial Planar Transistors
鈥?Suited for low level, low noise, low
frequency applications in hybrid cicuits.
鈥?Low Current, Low Voltage.
鈥?As complementary type, BCW68G PNP
transistor is recommended.
Ratings at 25擄C ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Base Current (DC)
Peak Base Current
Power Dissipation, T
S
= 79擄C
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Soldering Point
Note:
(1) Mounted on FR-4 printed-ciruit board.
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
STG
R
胃JA
R
胃JS
Value
45
75
5.0
800
1.0
100
200
330
150
鈥?5 to +150
鈮?/div>
285
(1)
鈮?/div>
215
Unit
V
V
V
mA
A
mA
mA
mW
擄C
擄C
擄C/W
擄C/W
Document Number 88172
09-May-02
www.vishay.com
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