BCW 65, BCW 66
NPN
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren f眉r die Oberfl盲chenmontage
Power dissipation 鈥?Verlustleistung
2.9
鹵0.1
0.4
3
250 mW
SOT-23
(TO-236)
0.01 g
1.1
Plastic case
Kunststoffgeh盲use
1.3
鹵0.1
Type
Code
1
2
2.5
max
Weight approx. 鈥?Gewicht ca.
Plastic material has UL classification 94V-0
Geh盲usematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.9
Dimensions / Ma脽e in mm
1=B
2=E
3=C
Maximum ratings (T
A
= 25
/
C)
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation 鈥?Verlustleistung
Collector current 鈥?Kollektorstrom (DC)
Peak Collector current 鈥?Kollektor-Spitzenstrom
Base current 鈥?Basis-Spitzenstrom
Peak Base current 鈥?Basis-Spitzenstrom
Junction temperature 鈥?Sperrschichttemperatur
Storage temperature 鈥?Lagerungstemperatur
B open
E open
C open
V
CE0
V
CB0
V
EB0
P
tot
I
C
I
CM
I
B
I
BM
T
j
T
S
Grenzwerte (T
A
= 25
/
C)
BCW 65
32 V
60 V
5V
250 mW
1
)
800 mA
1000 mA
100 mA
200 mA
150
/
C
- 65鈥? 150
/
C
BCW 66
45 V
75 V
Characteristics (T
j
= 25
/
C)
Min.
Collector-Base cutoff current 鈥?Kollektorreststrom
I
E
= 0, V
CB
= 32 V
I
E
= 0, V
CB
= 32 V, T
j
= 150
/
C
I
E
= 0, V
CB
= 45 V
I
E
= 0, V
CB
= 45 V, T
j
= 150
/
C
I
C
= 0, V
EB
= 4 V
BCW 65
BCW 66
I
CB0
I
CB0
I
CB0
I
CB0
I
EB0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Kennwerte (T
j
= 25
/
C)
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max.
20 nA
20
:
A
20 nA
20
:
A
20 nA
Emitter-Base cutoff current 鈥?Emitterreststrom
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (L枚tpad) an jedem Anschlu脽
01.11.2003
42
BCW65A相關(guān)型號PDF文件下載
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