BCW61CLT1 Datasheet

IC型號(hào)：
BCW61CLT1
PDF描述：
General Purpose Transistors
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PDF頁(yè)數(shù)：
8頁(yè)
芯片廠家：
MOTOROLA

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BCW61BLT1/D

General Purpose Transistors

PNP Silicon

COLLECTOR

BASE

BCW61BLT1

BCW61CLT1

BCW61DLT1

MAXIMUM RATINGS

Rating

Collector 鈥?Emitter Voltage

Collector 鈥?Base Voltage

Emitter 鈥?Base Voltage

Collector Current 鈥?Continuous

Symbol

VCEO

VCBO

VEBO

Value

鈥?2

鈥?.0

鈥?00

EMITTER

Unit

Vdc

mAdc

CASE 318 鈥?08, STYLE 6

SOT鈥?23 (TO 鈥?236AB)

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR鈥?5 Board(1)

TA = 25擄C

Derate above 25擄C

Thermal Resistance Junction to Ambient

Total Device Dissipation

Alumina Substrate,(2) TA = 25擄C

Derate above 25擄C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

Symbol

Max

225

1.8

556

300

2.4

TJ, Tstg

417

鈥?55 to +150

Unit

mW/擄C

擄C/W

mW/擄C

擄C/W

擄C

DEVICE MARKING

BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD

ELECTRICAL CHARACTERISTICS

(TA = 25擄C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector 鈥?Emitter Breakdown Voltage

(IC = 鈥?.0 mAdc, IB = 0)

Emitter 鈥?Base Breakdown Voltage

(IE = 鈥?.0

Adc, IC = 0)

Collector Cutoff Current

(VCE = 鈥?2 Vdc)

(VCE = 鈥?2 Vdc, TA = 150擄C)

1. FR鈥?5 = 1.0

0.75

2. Alumina = 0.4 0.3

V(BR)CEO

V(BR)EBO

ICES

鈥?/div>

鈥?0

nAdc

碌A(chǔ)dc

鈥?2

鈥?.0

鈥?/div>

Vdc

0.062 in.

0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company

Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data

漏

Motorola, Inc. 1996

型號(hào)

版本

描述

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