MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW60ALT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
1
BASE
BCW60ALT1
BCW60BLT1
BCW60DLT1
3
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
32
32
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 2.0 mAdc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 1.0
m
Adc, IC = 0)
Collector Cutoff Current
(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150擄C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. FR鈥?5 = 1.0
0.75
2. Alumina = 0.4 0.3
V(BR)CEO
V(BR)EBO
ICES
鈥?/div>
鈥?/div>
IEBO
鈥?/div>
20
20
20
nAdc
碌A(chǔ)dc
nAdc
32
5.0
鈥?/div>
鈥?/div>
Vdc
Vdc
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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