BCP56T1 Datasheet

IC型號：
BCP56T1
PDF描述：
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOU...
文件大?。?/label>
203.64KB
PDF頁數(shù)：
6頁
芯片廠家：
MOTOROLA

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BCP56T1/D

NPN Silicon

Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in audio amplifier

applications. The device is housed in the SOT-223 package, which is designed for

medium power surface mount applications.

鈥?/div>

High Current: 1.0 Amp

鈥?/div>

The SOT-223 package can be soldered using wave or reflow. The formed leads

absorb thermal stress during soldering, eliminating the possibility of damage to

the die

鈥?/div>

Available in 12 mm Tape and Reel

Use BCP56T1 to order the 7 inch/1000 unit reel

Use BCP56T3 to order the 13 inch/4000 unit reel

鈥?/div>

PNP Complement is BCP53T1

COLLECTOR 2,4

BCP56T1

SERIES

Motorola Preferred Device

MEDIUM POWER

NPN SILICON

HIGH CURRENT

TRANSISTOR

SURFACE MOUNT

BASE

EMITTER 3

CASE 318E-04, STYLE 1

TO-261AA

MAXIMUM RATINGS

(TC = 25擄C unless otherwise noted)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation @ TA = 25擄C(1)

Derate above 25擄C

Operating and Storage Temperature Range

Symbol

VCEO

VCBO

VEBO

TJ, Tstg

Value

100

1.5

鈥?65 to 150

Unit

Vdc

Adc

Watts

mW/擄C

擄C

DEVICE MARKING

BCP56T1 = BH

BCP56-10T1 = BK

BCP56-16T1 = BL

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance

Junction-to-Ambient (surface mounted)

Maximum Temperature for Soldering Purposes

Time in Solder Bath

Symbol

胃JA

Max

83.3

260

Unit

擄C/W

擄C

Sec

1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.

Thermal Clad is a trademark of the Bergquist Company

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Small鈥揝ignal

漏

Motorola, Inc. 1996

Transistors, FETs and Diodes Device Data

標準包裝
10
類別
分離式半導體產(chǎn)品
家庭
晶體管(BJT) - 單路
系列
-
晶體管類型
NPN
電流 - 集電極 (Ic)（最大）
1A
電壓 - 集電極發(fā)射極擊穿（最大）
80V
Ib、Ic條件下的Vce飽和度（最大）
500mV @ 50mA，500mA
電流 - 集電極截止（最大）
-
在某 Ic、Vce 時的最小直流電流增益 (hFE)
40 @ 150mA，2V
功率 - 最大
1.5W
頻率 - 轉換
130MHz
安裝類型
表面貼裝
封裝/外殼
TO-261-4，TO-261AA
供應商設備封裝
SOT-223
包裝
Digi-Reel®
其它名稱
BCP56T1OSDKR

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