BCP 54, BCP 55, BCP 56
NPN
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren f眉r die Oberfl盲chenmontage
Power dissipation 鈥?Verlustleistung
1.65
4
鹵0.2
鹵0.3
6.5
鹵0.1
3
鹵0.2
1.3 W
SOT-223
0.04 g
Plastic case
Kunststoffgeh盲use
3.5
Weight approx. 鈥?Gewicht ca.
Plastic material has UL classification 94V-0
Geh盲usematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1
0.7
2.3
2
3
3.25
Dimensions / Ma脽e in mm
1 = B 2, 4 = C 3 = E
Maximum ratings (T
A
= 25
/
C)
BCP 54
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation 鈥?Verlustleistung
Collector current 鈥?Kollektorstrom (DC)
Peak Collector current 鈥?Koll.-Spitzenstrom
Peak Base current 鈥?Basis-Spitzenstrom
Junction temp. 鈥?Sperrschichttemperatur
Storage temperature 鈥?Lagerungstemperatur
B open
E open
C open
V
CE0
V
CB0
V
EB0
P
tot
I
C
I
CM
I
BM
T
j
T
S
45 V
45 V
7
Grenzwerte (T
A
= 25
/
C)
BCP 55
60 V
60 V
5V
1.3 W
1
)
1A
1.5 A
200 mA
150
/
C
- 65鈥? 150
/
C
BCP 56
80 V
100 V
Characteristics (T
j
= 25
/
C)
Min.
Collector-Base cutoff current 鈥?Kollektorreststrom
I
E
= 0, V
CB
= 30 V
I
E
= 0, V
CB
= 30 V, T
j
= 125
/
C
Emitter-Base cutoff current 鈥?Emitterreststrom
I
C
= 0, V
EB
= 5 V
I
C
= 500 mA, I
B
= 50 mA
I
EB0
V
CEsat
鈥?/div>
鈥?/div>
I
CB0
I
CB0
鈥?/div>
鈥?/div>
Kennwerte (T
j
= 25
/
C)
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max.
100 nA
10
:
A
100 nA
500 mV
Collector saturation volt. 鈥?Kollektor-S盲ttigungsspg.
2
)
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (L枚tpad) an jedem Anschlu脽
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% 鈥?Gemessen mit Impulsen t
p
= 300
:
s, Schaltverh盲ltnis
#
2%
26
01.11.2003
1
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