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BC859B/E8 Datasheet

  • BC859B/E8

  • TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SOT-23

  • 5頁

  • ETC

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BC856 thru BC859
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
Mounting Pad Layout
0.031 (0.8)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
0.035 (0.9)
0.079 (2.0)
Top View
Pin Configuration
1
= Base,
2
= Emitter,
3
= Collector
0.037 (0.95)
0.037 (0.95)
Type
Dimensions in inches
and (millimeters)
Marking
3A
3B
3E
3F
3G
Type
BC858A
B
C
BC859A
B
C
Marking
3J
3K
3L
4A
4B
4C
1
2
max. .004 (0.1)
BC856A
B
BC857A
B
C
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Features
鈥?PNP Silicon Epitaxial Planar Transistors for switching
and AF amplifier applications.
鈥?Especially suited for automatic insertion in thick and
thin-film circuits.
鈥?These transistors are subdivided into three groups
(A, B, and C) according to their current gain. The type
BC856 is available in groups A and B, however, the types
BC857, BC558 and BC859 can be supplied in all three
groups. The BC849 is a low noise type.
鈥?As complementary types, the NPN transistors
BC846...BC849 are recomended.
(T
A
= 25擄C unless otherwise noted)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Packaging Codes/Options:
E8/10K per 13鈥?reel (8mm tape), 30K/box
E9/3K per 7鈥?reel (8mm tape), 30K/box
Maximum Ratings and Thermal Characteristics
Parameter
Collector-Base Voltage
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
Symbol
鈥揤
CBO
Value
80
50
30
80
50
30
65
45
30
5
100
200
200
200
310
(1)
Unit
V
Collector-Emitter Voltage (Base shorted)
鈥揤
CES
V
Collector-Emitter Voltage (Base open)
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
SB
= 50擄C
Thermal Resistance Junction to Ambient Air
鈥揤
CEO
鈥揤
EBO
鈥揑
C
鈥揑
CM
鈥揑
BM
I
EM
P
tot
R
胃JA
R
胃SB
T
j
T
S
V
V
mA
mA
mA
mA
mW
擄C/W
擄C/W
擄C
擄C
450
(1)
320
(1)
150
鈥?5 to +150
Thermal Resistance Junction to Substrate Backside
Junction Temperature
Storage Temperature Range
Note:
(1) Device on fiberglass substrate, see layout on third page.
Document Number 88169
09-May-02
www.vishay.com
1

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