鈥?/div>
Complement to BC846 ... BC850
PNP EPITAXIAL
SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (T
A
=25擄C)
擄
Characteristic
Collector-Base Voltage
: BC856
: BC857/860
: BC858/859
Collector-Emitter Voltage
: BC856
: BC857/860
: BC858/859
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
-80
-50
-30
V
CEO
-65
-45
-30
-5
-100
310
150
-65 ~ 150
V
V
V
V
mA
mW
擄C
擄C
V
V
V
Rating
Unit
V
EBO
I
C
P
C
T
J
T
STG
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25擄C)
擄
Characteristic
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
: BC856/857/858
: BC859/860
: BC859
: BC860
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
CBO
NF
NF
Test Conditions
V
CB
= -30V, I
E
=0
V
CE
= -5V, I
C
= -2mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA
f=100MHz
V
CB
= -10V, f=1MHz
V
CE
= -5V, I
C
= -200碌A(chǔ)
f=1KHz, R
G
=2K鈩?/div>
V
CE
= -5V, I
C
= -200碌A(chǔ)
R
G
=2K鈩?/div>
f=30~15000Hz
Min
Typ
Max
-15
800
-300
-650
Unit
nA
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB
110
-90
-250
-700
-900
-660
150
-600
-750
-800
2
1
1.2
1.2
6
10
4
4
2
h
FE
CLASSIFICATION
Classification
h
FE
A
110-220
B
200-450
C
420-800
MARKING CODE
TYPE
MARK
856A
9AA
856B
9AB
856C
9AC
857A
9BA
857B
9BB
857C
9BC
858A
9CA
858B
9CB
858C
9CC
859A
9DA
859B
9DB
859C
9DC
860A
9EA
860B
9EB
860C
9EC
Rev. B
漏
1999 Fairchild Semiconductor Corporation
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2
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