MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC846ALT1/D
General Purpose Transistors
BC846ALT1,BLT1
BC847ALT1,
COLLECTOR
3
NPN Silicon
1
BASE
BLT1,CLT1 thru
BC850ALT1,BLT1,
CLT1
BC846, BC847 and BC848 are
Motorola Preferred Devices
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
VEBO
IC
BC846
65
80
6.0
100
BC847
BC850
45
50
6.0
100
BC848
BC849
30
30
5.0
100
2
EMITTER
Unit
V
V
V
mAdc
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
225
1.8
R
q
JA
PD
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
mW
mW/擄C
擄C/W
擄C
556
mW
mW/擄C
擄C/W
Max
Unit
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
Collector 鈥?Emitter Breakdown Voltage BC846A,B
(IC = 10
碌A(chǔ),
VEB = 0)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
Collector 鈥?Base Breakdown Voltage
(IC = 10
m
A)
Emitter 鈥?Base Breakdown Voltage
(IE = 1.0
m
A)
BC846A,B
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
BC846A,B
BC847A,B,C
BC848A,B,C, BC849A,B,C, BC850A,B,C
V(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
鈥?/div>
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鈥?/div>
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鈥?/div>
15
5.0
V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150擄C)
1. FR鈥? = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
ICBO
nA
碌A(chǔ)
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
BC849BLT1 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
100mA
30V
600mV @ 5mA，100mA
-
200 @ 2mA，5V
225mW
100MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
帶卷 (TR)
BC849BLT1相關(guān)型號PDF文件下載
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