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BC848B/E8 Datasheet

  • BC848B/E8

  • TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SOT-23

  • 5頁(yè)

  • ETC

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BC846 thru BC849
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
Mounting Pad Layout
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
0.031 (0.8)
0.035 (0.9)
Top View
Pin Configuration
1
= Base
2
= Emitter
3
= Collector
Dimensions in inches
and (millimeters)
0.079 (2.0)
0.037 (0.95)
0.037 (0.95)
1
2
max. .004 (0.1)
Type
BC846A
B
BC847A
B
C
Marking
1A
1B
1E
1F
1G
Type
BC848A
B
C
BC849B
C
Marking
1J
1K
1L
2B
2C
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Features
鈥?NPN Silicon Epitaxial Planar Transistors for switching
and AF amplifier applications.
鈥?Especially suited for automatic insertion in thick and
thin-film circuits.
鈥?These transistors are subdivided into three groups (A, B,
and C) according to their current gain. The type BC846 is
available in groups A and B, however, the types BC847 and
BC848 can be supplied in all three groups. The BC849 is a
low noise type available in groups B and C. As complementary
types, the PNP transistors BC856...BC859 are recommended.
(T
A
= 25擄C unless otherwise noted)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Packaging Codes/Options:
E8/10K per 13鈥?reel (8mm tape), 30K/box
E9/3K per 7鈥?reel (8mm tape), 30K/box
Maximum Ratings and Thermal Characteristics
Parameter
Collector-Base Voltage
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846, BC847
BC848, BC849
Symbol
V
CBO
Value
80
50
30
80
50
30
65
45
30
6
5
100
200
200
200
310
(1)
(1)
Unit
V
Collector-Emitter Voltage
V
CES
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
SB
= 50擄C
V
CEO
V
EBO
I
C
I
CM
I
BM
鈥揑
EM
P
tot
R
胃JA
R
胃SB
T
j
T
S
V
V
mA
mA
mA
mA
mW
擄C/W
擄C/W
擄C
擄C
Thermal Resistance Junction to Ambiant Air
Thermal Resistance Junction to Substrate Backside
Junction Temperature
Storage Temperature Range
Note:
(1) Device on fiberglass substrate, see layout on third page.
450
320
(1)
150
鈥?5 to +150
Document Number 88164
09-May-02
www.vishay.com
1

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