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BC847BDW1T1G Datasheet

  • BC847BDW1T1G

  • Dual General Purpose Transistors

  • 6頁

  • ONSEMI

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BC846BDW1T1,
BC847BDW1T1,
BC848CDW1T1
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT鈭?63/SC鈭?8 which is
designed for low power surface mount applications.
鈥?/div>
Device Marking:
BC846BDW1T1 = 1B
BC847BDW1T1 = 1F
BC848CDW1T1 = 1L
Features
(3)
http://onsemi.com
(2)
(1)
Q
1
Q
2
(4)
(5)
(6)
鈥?/div>
Pb鈭扚ree Package is Available
6
DIAGRAM
MARKING
SOT鈭?63
CASE 419B
STYLE 1
MAXIMUM RATINGS
Rating
Collector 鈭扙mitter Voltage
Collector 鈭払ase Voltage
Emitter 鈭払ase Voltage
Collector Current 鈭?/div>
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
1xm
1
1x = Specific Device Code
x = B, F, L
m = Date Code
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
ORDERING INFORMATION
Device
BC846BDW1T1
BC847BDW1T1
Package
SOT鈭?63
SOT鈭?63
SOT鈭?63
(Pb鈭扚ree)
SOT鈭?63
Shipping
鈥?/div>
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR鈭? Board (Note 1)
T
A
= 25擄C
Derate Above 25擄C
Thermal Resistance,
Junction鈭抰o鈭扐mbient
Junction and Storage
Temperature Range
1. FR鈭? = 1.0 x 0.75 x 0.062 in
Symbol
P
D
Max
380
250
Unit
mW
BC847BDW1T1G
BC848CDW1T1
3.0
R
qJA
T
J
, T
stg
328
鈭?5 to +150
mW/擄C
擄C/W
擄C
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2004
1
June, 2004 鈭?Rev. 3
Publication Order Number:
BC846BDW1T1/D

BC847BDW1T1G 產(chǎn)品屬性

  • 3,000

  • 分離式半導體產(chǎn)品

  • 晶體管(BJT) - 陣列

  • -

  • 2 NPN（雙）

  • 100mA

  • 45V

  • 600mV @ 5mA，100mA

  • -

  • 200 @ 2mA，5V

  • 380mW

  • 100MHz

  • 表面貼裝

  • 6-TSSOP，SC-88，SOT-363

  • SOT-363

  • 帶卷 (TR)

  • BC847BDW1T1GOSTR

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