SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 聳 june 1996
PARTMARKING DETAILS
BC817
聳 6DZ
BC817-16 聳 6AZ
BC817-25 聳 6BZ
BC817-40 聳 6CZ
COMPLEMENTARY TYPES
BC817
聳 BC807
BC818
聳 BC808
7
BC818
聳 6HZ
BC818-16 聳 6EZ
BC818-25 聳 6FZ
BC818-40 聳 6GZ
BC817
BC818
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
I
BM
P
tot
T
j
:T
stg
BC817
50
45
5
1
500
100
200
330
-55 to +150
30
25
SOT23
BC818
UNIT
V
V
V
A
mA
mA
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current
Transfer Ratio
-16
-25
-40
Transition
Frequency
Collector-base
Capacitance
f
T
C
obo
SYMBOL
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
100
40
100
160
250
200
5.0
MIN.
TYP.
MAX. UNIT CONDITIONS.
0.1
5
10
700
1.2
600
250
400
600
MHz
pF
碌
A
碌
A
碌
A
V
CB
=20V, I
E
=0
V
CB
=20V, I
E
=0, T
amb
=150擄C
V
EB
=5V, I
C
=0
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=10mA, V
CE
=5V
f=35MHz
I
E
=I
e
=0, V
CB
=10V
f=1MHz
mV
V
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
