BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
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Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier
Applications
Complementary PNP Types Available (BC807)
B
E
SOT-23
Dim
A
C
B
TOP VIEW
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.85
0擄
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.80
8擄
A
B
C
Mechanical Data
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202, Method
208
Pin Connections: See Diagram
Marking (See Page 3): BC817-16 6A, K6A
BC817-25 6B, K6B
BC817-40 6C, K6C
Ordering & Date Code Information: See Page 3
Approx. Weight: 0.008 grams
E
D
G
H
C
D
E
G
H
K
J
L
M
J
K
L
M
a
All Dimensions in mm
Maximum Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
@T
A
= 25擄C unless otherwise specified
Symbol
V
CEO
V
EBO
I
C
I
CM
I
EM
P
d
R
qSB
R
qJA
T
j
, T
STG
Value
45
5.0
800
1000
1000
310
320
403
-65 to +150
Unit
V
V
mA
mA
mA
mW
擄C/W
擄C/W
擄C
Characteristic
Power Dissipation at T
SB
= 50擄C (Note 1)
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
DC Current Gain
@T
A
= 25擄C unless otherwise specified
Symbol
Min
100
160
250
60
100
170
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
鈥?/div>
Max
250
400
600
鈥?/div>
鈥?/div>
鈥?/div>
0.7
1.2
100
5.0
100
鈥?/div>
12
Unit
Test Condition
V
CE
= 1.0V, I
C
= 100mA
鈥?/div>
V
CE
= 1.0V, I
C
= 300mA
Characteristic (Note 2)
Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Notes:
V
CE(SAT)
V
BE
I
CES
I
EBO
f
T
C
CBO
V
V
nA
碌A(chǔ)
nA
MHz
pF
I
C
= 500mA, I
B
= 50mA
V
CE
= 1.0V, I
C
= 300mA
V
CE
= 45V
V
CE
= 25V, T
j
= 150擄C
V
EB
= 4.0V
V
CE
= 5.0V, I
C
= 10mA,
f = 50MHz
V
CB
= 10V, f = 1.0MHz
1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm
2
area.
2. Short duration pulse test used to minimize self-heating effect.
DS11107 Rev. 9 - 2
1 of 3
BC817-16/-25/-40
BC817-40 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
500mA
45V
700mV @ 50mA，500mA
-
250 @ 100mA，1V
250mW
100MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3
帶卷 (TR)
497-2531-2
BC817-40相關(guān)型號(hào)PDF文件下載
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