BC807/BC808
BC807/BC808
Switching and Amplifier Applications
鈥?Suitable for AF-Driver stages and low power output stages
鈥?Complement to BC817/BC818
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CES
Collector-Emitter Voltage
: BC807
: BC808
V
CEO
Collector-Emitter Voltage
: BC807
: BC808
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
-45
-25
-5
-800
-310
150
-65 ~ 150
V
V
V
mA
mW
擄C
擄C
-50
-30
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC807
: BC808
Collector-Emitter Breakdown Voltage
: BC807
: BC808
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -10mA, I
B
=0
Min.
-45
-25
I
C
= -0.1mA, V
BE
=0
-50
-30
I
E
= -0.1mA, I
C
=0
V
CE
= -25V, V
BE
=0
V
EB
= -4V, I
C
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -300mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -1V, I
C
= -300mA
V
CE
= -5V, I
C
= -10mA
f=50MHz
V
CB
= -10V, f=1MHz
100
12
100
60
-5
-100
-100
630
-0.7
-1.2
V
V
MHz
pF
V
V
V
nA
nA
Typ.
Max.
Units
V
V
BV
CES
BV
EBO
I
CES
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
漏2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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