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BC807-25LT3 Datasheet

  • BC807-25LT3

  • General Purpose Transistors(PNP Silicon)

  • 4頁

  • ONSEMI

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BC807鈭?6LT1,
BC807鈭?5LT1, BC807鈭?0LT1
General Purpose
Transistors
PNP Silicon
http://onsemi.com
Features
COLLECTOR
3
1
BASE
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
鈭?5
鈭?0
鈭?.0
鈭?00
Unit
V
V
V
mAdc
3
1
2
SOT鈭?3
CASE 318
STYLE 6
1
xxx
= 5A (BC807鈭?6LT1)
5B1 (BC807鈭?5LT1)
5C (BC807鈭?0LT1)
= Date Code
2
EMITTER
鈥?/div>
Pb鈭扚ree Packages are Available
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current 鈭?Continuous
MARKING
DIAGRAM
3
xxxD
2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈭?5 Board,
(Note 1) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction鈭抰o鈭扐mbient
Total Device Dissipation Alumina Substrate,
(Note 2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction鈭抰o鈭扐mbient
Junction and Storage Temperature
1. FR鈭? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
鈭?5 to
+150
mW
mW/擄C
擄C/W
擄C
556
mW
mW/擄C
擄C/W
D
Max
Unit
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2004
1
June, 2004 鈭?Rev. 5
Publication Order Number:
BC807鈭?6LT1/D

BC807-25LT3 產(chǎn)品屬性

  • ON Semiconductor

  • Transistors Bipolar (BJT)

  • PNP

  • 45 V

  • 5 V

  • 0.5 A

  • 160 at 100 mA at 1 V

  • Single

  • 100 MHz

  • + 150 C

  • SMD/SMT

  • SOT-23-3

  • Reel

  • - 0.5 A

  • - 55 C

  • 225 mW

  • 10000

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