BC635/637/639
BC635/637/639
Switching and Amplifier Applications
鈥?Complement to BC636/638/640
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CER
Parameter
Collector-Emitter Voltage at R
BE
=1K鈩?/div>
: BC635
: BC637
: BC639
Collector-Emitter Voltage
: BC635
: BC637
: BC639
V
CEO
Collector-Emitter Voltage
: BC635
: BC637
: BC639
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
45
60
80
5
1
1.5
100
1
150
-65 ~ 150
V
V
V
V
A
A
mA
W
擄C
擄C
45
60
100
V
V
V
Value
45
60
100
Units
V
V
V
V
CES
鈥?/div>
PW=5ms, Duty Cycle=10%
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC635
: BC637
: BC639
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: All
: BC635
: BC637/BC639
: All
Test Condition
I
C
=10mA, I
B
=0
Min.
45
60
80
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=500mA
I
C
=500mA, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CE
=5V, I
C
=10mA,
f=50MHz
100
25
40
40
25
0.1
0.1
250
160
0.5
1
V
V
MHz
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
漏2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
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