MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC635/D
High Current Transistors
NPN Silicon
COLLECTOR
2
3
BASE
1
EMITTER
BC635
BC637
BC639
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC
635
45
45
BC
637
60
60
5.0
0.5
625
5.0
1.5
12
鈥?55 to +150
BC
639
80
80
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/擄C
Watt
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 14
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
BC635
BC637
BC639
V(BR)CBO
BC635
BC637
BC639
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
10
nAdc
碌A(chǔ)dc
45
60
80
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
45
60
80
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Collector 鈥?Base Breakdown Voltage
(IC = 100
碌A(chǔ)dc,
IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125擄C)
1. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
Duty Cycle 2.0%.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
BC639 產(chǎn)品屬性
5,000
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
1A
80V
500mV @ 50mA，500mA
-
40 @ 150mA，2V
625mW
200MHz
通孔
TO-226-3、TO-92-3 標準主體
TO-92-3
散裝
BC639OS
BC639相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Fuse
ETC
-
英文版
NPN Silicon AF Transistors (High current gain High collector...
-
英文版
NPN EPITAXIAL SILICON TRANSISTOR
FAIRCHILD
-
英文版
NPN medium power transistors
PHILIPS
-
英文版
COMPLEMENTARY SILICON TRANSISTORS
MICRO-ELECTRONI...
-
英文版
High Current Transistors
-
英文版
NPN medium power transistors
PHILIPS [P...
-
英文版
NPN EPITAXIAL SILICON TRANSISTOR
FAIRCHILD ...
-
英文版
High Current Transistors
MOTOROLA [...
-
英文版
COMPLEMENTARY SILICON TRANSISTORS
MICRO-ELECTRONI...
-
英文版
NPN Silicon AF Transistors (High current gain High collector...
SIEMENS [S...
-
英文版
High Current Transistors
-
英文版
PNP medium power transistors
PHILIPS
-
英文版
PNP Silicon AF Transistors (High current gain High collector...
-
英文版
COMPLEMENTARY SILICON TRANSISTORS
MICRO-ELECTRONI...
-
英文版
High Current Transistors
ONSEMI
-
英文版
PNP EPITAXIAL SILICON TRANSISTOR
FAIRCHILD
-
英文版
High Current Transistors(PNP Silicon)
ONSEMI [ON...
-
英文版
High Current Transistors
MOTOROLA [...
-
英文版
High Current Transistors
ONSEMI [ON...
1
2
3
4
