BC635, BC637, BC639,
BC639-16
High Current Transistors
NPN Silicon
http://onsemi.com
COLLECTOR
2
Symbol
VCEO
BC635
BC637
BC639
Collector-Base Voltage
BC635
BC637
BC639
Emitter-Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation
@ TA = 25擄C
Derate above 25擄C
Total Device Dissipation
@ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
VEBO
IC
PD
625
5.0
PD
800
12
TJ, Tstg
鈥?5 to
+150
mW
mW/擄C
擄C
mW
mW/擄C
VCBO
45
60
80
5.0
1.0
Vdc
Adc
1
2
3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Value
45
60
80
Vdc
Unit
Vdc
3
BASE
1
EMITTER
TO鈥?2 (TO鈥?26AA)
CASE 29
STYLE 14
ORDERING INFORMATION
Device
Package
TO鈥?2
TO鈥?2
TO鈥?2
TO鈥?2
TO鈥?2
TO鈥?2
TO鈥?2
Shipping
2000/Tape & Reel
2000/Ammo Pack
5000 Units/Box
5000 Units/Box
2000/Tape & Reel
2000/Ammo Pack
2000/Ammo Pack
Unit
擄C/W
擄C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
R
胃JA
R
胃JC
Max
200
83.3
BC635RL1
BC635ZL1
BC637
BC639
BC639RL1
BC639ZL1
BC639鈥?6ZL1
漏
Semiconductor Components Industries, LLC, 2001
1
June, 2000 鈥?Rev. 3
Publication Order Number:
BC635/D