MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC636/D
High Current Transistors
PNP Silicon
COLLECTOR
2
3
BASE
1
EMITTER
BC636
BC638
BC640
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC
636
鈥?5
鈥?5
BC
638
鈥?0
鈥?0
鈥?.0
鈥?.5
625
5.0
1.5
12
鈥?55 to +150
BC
640
鈥?0
鈥?0
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/擄C
Watt
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 14
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage*
(IC = 鈥?0 mAdc, IB = 0)
V(BR)CEO
BC636
BC638
BC640
V(BR)CBO
BC636
BC638
BC640
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?00
鈥?0
nAdc
碌A(chǔ)dc
鈥?5
鈥?0
鈥?0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
鈥?5
鈥?0
鈥?0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Collector 鈥?Base Breakdown Voltage
(IC = 鈥?00
碌A(chǔ)dc,
IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 鈥?0
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 鈥?0 Vdc, IE = 0)
(VCB = 鈥?0 Vdc, IE = 0, TA = 125擄C)
1. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
Duty Cycle 2.0%.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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