Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 37, 39 (NPN)
BC636, 38, 40 (PNP)
TO 92
BCE
Driver Stages of Audio Amplifier Application.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
DESCRIPTION
SYMBOL
BC635
BC636
45
45
BC637
BC638
60
60
5.0
1.0
800
6.4
2.75
22
-55 to +150
BC639
BC640
80
80
UNITS
V
V
V
A
mW
mW/deg C
W
mW/deg C
deg C
VCBO
Collector -Base Voltage
VCEO
Collector -Emitter Voltage
VEBO
Emitter -Base Voltage
IC
Collector Current Continuous
PD
Power Dissipation@ Ta=25 deg C
Derate Above 25 deg C
Power Dissipation@ Tc=25 deg C
Derate Above 25 deg C
Tj, Tstg
Operating & Storage Junction
Temperature Range
THERMAL RESISTANCE
Rth(j-c)
From Junction to Case
Rth(j-a)
From Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
BC635
BC636
VCEO *
IC=10mA,IB=0
>45
Collector -Emitter Voltage
VCBO
IC=100uA.IE=0
>45
Collector -Base Voltage
VEBO
IE=10uA, IC=0
Emitter-Base Voltage
ICBO
VCB=30V, IE=0
Collector-Cut off Current
Ta=125 deg C
VCB=30V, IE=0
VBE(on) * IC=500mA,VCE=2V
VCE(Sat) * IC=500mA, IB=50mA
hFE*
IC=5mA, VCE=2V
.
IC=150mA,VCE=2V
Group-10
Group-16
IC=500mA,VCE=2V
45
156
BC637
BC639
BC638
BC640
>60
>80
>60
>80
>5.0
<100
deg C/W
deg C/W
UNITS
V
V
V
nA
Base Emitter on Voltage
Collector Emitter Saturation Voltage
DC Current Gain
40-250
<10
<1.0
<0.5
>25
40-160
40-160
63 -160
100 -250
>25
uA
V
V
Continental Device India Limited
Data Sheet
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