鈥?/div>
Complement to BC546 ... BC 550
PNP EPITAXIAL
SILICON TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25擄C)
擄
Characteristic
Collector-Base Capacitance
: BC556
: BC557/560
: BC558/559
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
-80
-50
-30
V
CEO
-65
-45
-30
-5
-100
500
150
-65 ~ 150
V
V
V
V
mA
mW
擄C
擄C
V
V
V
Rating
Unit
V
EBO
I
C
P
C
T
J
T
STG
1. Collector 2. Base 3. Emitter
ELECTRICAL CHARACTERISTICS (T
A
=25擄C)
擄
Characteristic
Collector Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Collector Base Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Noise Figure
: BC556/557/558
: BC559/560
: BC559
: BC560
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(on)
V
BE
(on)
f
T
C
CBO
NF
NF
Test Conditions
V
CB
= -30V, I
E
=0
V
CE
= -5V, I
C
=2mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA
V
CB
= -10V, f=1MHz
V
CE
= -5V, I
C
= -200碌A
f=1KHz, R
G
=2K鈩?/div>
V
CE
= -5V, I
C
= -200碌A
R
G
=2K鈩?/div>
f=30~15000MHz
Min
Typ
Max
-15
800
-300
-650
Unit
nA
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB
110
-90
-250
-700
-900
-660
150
-600
-750
-800
2
1
1.2
1.2
6
10
4
4
2
h
FE
CLASSIFICATION
Classification
h
FE
A
110-220
B
200-450
C
420-800
Rev. B
漏
1999 Fairchild Semiconductor Corporation
1
2
3
