MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC556/D
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC556,B
BC557A,B,C
BC558B
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC
556
鈥?5
鈥?0
BC
557
鈥?5
鈥?0
鈥?.0
鈥?00
625
5.0
1.5
12
鈥?55 to +150
BC
558
鈥?0
鈥?0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watt
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 17
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 鈥?.0 mAdc, IB = 0)
V(BR)CEO
BC556
BC557
BC558
V(BR)CBO
BC556
BC557
BC558
V(BR)EBO
BC556
BC557
BC558
ICES
BC556
BC557
BC558
BC556
BC557
BC558
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.0
鈥?.0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?00
鈥?00
鈥?00
鈥?.0
鈥?.0
鈥?.0
nA
鈥?.0
鈥?.0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?0
鈥?0
鈥?0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
鈥?5
鈥?5
鈥?0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
V
Collector 鈥?Base Breakdown Voltage
(IC = 鈥?00
碌A(chǔ)dc)
Emitter 鈥?Base Breakdown Voltage
(IE = 鈥?00
m
Adc, IC = 0)
Collector鈥揈mitter Leakage Current
(VCES = 鈥?0 V)
(VCES = 鈥?0 V)
(VCES = 鈥?0 V, TA = 125擄C)
碌A(chǔ)
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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