MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Low Noise Transistors
Order this document
by BC549B/D
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC549B,C
BC550B,C
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC549
30
30
5.0
100
625
5.0
1.5
12
鈥?55 to +150
BC550
45
50
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watt
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 17
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 10
碌Adc,
IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 30 V, IE = 0, TA = +125擄C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
V(BR)CEO
BC549B,C
BC550B,C
V(BR)CBO
BC549B,C
BC550B,C
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
IEBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
15
5.0
15
nAdc
碌Adc
nAdc
30
50
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
30
45
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
BC550B 產品屬性
2,000
分離式半導體產品
晶體管(BJT) - 單路
-
NPN
100mA
45V
600mV @ 5mA，100mA
-
200 @ 2mA，5V
500mW
300MHz
通孔
TO-226-3、TO-92-3 標準主體
TO-92-3
散裝
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