BC 546 ... BC 549
NPN
Si-Epitaxial PlanarTransistors
General Purpose Transistors
NPN
500 mW
TO-92
(10D3)
0.18 g
Power dissipation 鈥?Verlustleistung
Plastic case
Kunststoffgeh盲use
Weight approx. 鈥?Gewicht ca.
Plastic material has UL classification 94V-0
Geh盲usematerial UL94V-0 klassifiziert
Standard Pinning
1=C 2=B 3=E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25
/
C)
BC 546
Collector-Emitter-voltage
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation 鈥?Verlustleistung
Collector current 鈥?Kollektorstrom (DC)
Peak Coll. current 鈥?Kollektor-Spitzenstrom
Peak Base current 鈥?Basis-Spitzenstrom
Peak Emitter current 鈥?Emitter-Spitzenstrom
Junction temp. 鈥?Sperrschichttemperatur
Storage temperature 鈥?Lagerungstemperatur
B open
B shorted
E open
C open
V
CE0
V
CES
V
CB0
V
EB0
P
tot
I
C
I
CM
I
BM
- I
EM
T
j
T
S
65 V
85 V
80 V
6V
Grenzwerte (T
A
= 25
/
C)
BC 547
45 V
50 V
50 V
6V
500 mW
1
)
100 mA
200 mA
200 mA
200 mA
150
/
C
- 65鈥? 150
/
C
BC 548/549
30 V
30 V
30 V
5V
Characteristics, T
j
= 25
/
C
Group A
DC current gain 鈥?Kollektor-Basis-Stromverh盲ltnis
V
CE
= 5 V, I
C
= 10
:
A
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 100 mA
h-Parameters at V
CE
= 5V, I
C
= 2 mA, f = 1 kHz
Small signal current gain 鈥?Stromverst.
Input impedance 鈥?Eingangsimpedanz
Output admittance 鈥?Ausgangsleitwert
Reverse voltage transfer ratio
Spannungsr眉ckwirkung
h
fe
h
ie
h
oe
h
re
typ. 220
1.6...4.5 k
S
18 < 30
:
S
typ.1.5 *10
-4
h
FE
h
FE
h
FE
typ. 90
110...220
typ. 120
Kennwerte, T
j
= 25
/
C
Group B
typ. 150
200...450
typ. 200
typ. 330
3.2...8.5 k
S
30 < 60
:
S
typ. 2 *10
-4
Group C
typ. 270
420...800
typ.400
typ. 600
6...15 k
S
60 < 110
:
S
typ. 3 *10
-4
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
G眉ltig, wenn die Anschlu脽dr盲hte in 2 mm Abstand von Geh盲use auf Umgebungstemperatur gehalten werden
6
01.11.2003
1
2
