MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC337/D
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC337,-16,-25,-40
BC338,-16,-25,-40
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC337
45
50
5.0
800
625
5.0
1.5
12
鈥?55 to +150
BC338
25
30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watt
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 17
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector 鈥?Emitter Breakdown Voltage
(IC = 100
碌A(chǔ),
IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
A, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
BC337
BC338
ICES
BC337
BC338
IEBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
100
100
nAdc
V(BR)CEO
BC337
BC338
V(BR)CES
BC337
BC338
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
100
nAdc
50
30
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
nAdc
45
25
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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