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BC327/328

BC327/328

Switching and Amplifier Applications

鈥?Suitable for AF-Driver stages and low power output stages

鈥?Complement to BC337/BC338

TO-92

1

1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25擄C unless otherwise noted

Symbol

V

CES

Parameter

Collector-Emitter Voltage

: BC327

: BC328

Collector-Emitter Voltage

: BC327

: BC328

Emitter-Base Voltage

Collector Current (DC)

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-50

-30

-45

-25

-5

-800

625

150

-55 ~ 150

Units

V

V

V

V

V

mA

mW

擄C

擄C

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

Electrical Characteristics

T

a

=25擄C unless otherwise noted

Symbol

BV

CEO

Parameter

Collector-Emitter Breakdown Voltage

: BC327

: BC328

Collector-Emitter Breakdown Voltage

: BC327

: BC328

Emitter-Base Breakdown Voltage

Collector Cut-off Current

: BC327

: BC328

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

Test Condition

I

C

= -10mA, I

B

=0

Min.

-45

-25

I

C

= -0.1mA, V

BE

=0

-50

-30

I

E

= -10碌A(chǔ), I

C

=0

V

CE

= -45V, V

BE

=0

V

CE

= -25V, V

BE

=0

V

CE

= -1V, I

C

= -100mA

V

CE

= -1V, I

C

= -300mA

I

C

= -500mA, I

B

= -50mA

V

CE

= -1V, I

C

= -300mA

V

CE

= -5V, I

C

= -10mA, f=20MHz

V

CB

= -10V, I

E

=0, f=1MHz

100

12

100

40

-5

-2

-2

-100

-100

630

-0.7

-1.2

V

V

MHz

pF

V

V

V

nA

nA

Typ.

Max.

Units

V

V

BV

CES

BV

EBO

I

CES

h

FE1

h

FE2

V

CE

(sat)

V

BE

(on)

f

T

C

ob

h

FE

Classification

Classification

h

FE1

h

FE2

16

100 ~ 250

60-

25

160 ~ 400

100-

40

250 ~ 630

170-

漏2002 Fairchild Semiconductor Corporation

Rev. B1, August 2002

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