Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302
TO-39
Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25潞C unless specified otherwise)
DESCRIPTION
SYMBOL
BC300 BC301
V
CEO
80
60
Collector Emitter Voltage
V
CBO
Collector Base Voltage
120
90
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25潞C
Junction Temperature
Storage Temperature Range
V
EBO
I
C
P
D
T
j
T
stg
7.0
7.0
500
850
175
-65 to +200
BC302
45
60
7.0
UNITS
V
V
V
mA
mW
潞C
潞C
ELECTRICAL CHARACTERISTICS (Ta=25潞C unless specified otherwise)
BC300
BC301
BC302
DESCRIPTION
SYMBOL TEST CONDITION
MIN MAX MIN MAX MIN MAX
V
CB
=120V, I
E
=0
I
CBO
20
Collector Cut off Current
V
CB
=90V, I
E
=0
20
V
CB
=60V, I
E
=0
DC Current Gain
BC300/301/302
BC300/301/302-4
BC300/301/302-5
BC300/301/302-6
Collector Emitter Sat Voltage
DYNAMIC CHARACTERISTICS
Transition Frequency
ALL
h
FE
I
C
=150mA,V
CE
=10V
40
40
I
C
=150mA,V
CE
=10V
V
CE(Sat)
I
C
=150mA,V
CE
=10V
I
C
=150mA,I
B
=15mA
70
120
ALL
240
80
140
240
0.5
20
UNITS
n螒
n螒
n螒
V
f
T
V
CE
=10V,I
C
=50mA,
f=20MHz
100
400
MHz
Continental Device India Limited
Data Sheet
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