MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC237/D
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC237,A,B,C
BC238B,C
BC239,C
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Emitter Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCES
VEBO
IC
PD
PD
TJ, Tstg
BC
237
45
50
6.0
BC
238
25
30
5.0
100
350
2.8
1.0
8.0
鈥?55 to +150
BC
239
25
30
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 17
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 100
m
A, IC = 0)
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
BC237
BC238
BC239
BC237
BC238
BC239
BC238
BC239
BC237
BC238
BC239
BC237
V(BR)CEO
45
25
25
6.0
5.0
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.2
0.2
0.2
0.2
0.2
0.2
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
15
15
15
4.0
4.0
4.0
碌A(chǔ)
V
V(BR)EBO
V
ICES
nA
(VCE = 50 V, VBE = 0)
(VCE = 30 V, VBE = 0) TA = 125擄C
(VCE = 50 V, VBE = 0) TA = 125擄C
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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