BC237/238/239
BC237/238/239
Switching and Amplifier Applications
鈥?Low Noise: BC239
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CES
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
: BC237
: BC238/239
: BC237
: BC238/239
: BC237
: BC238/239
1
TO-92
1. Collector 2. Base 3. Emitter
Value
50
30
45
25
6
5
100
500
150
-55 ~ 150
Units
V
V
V
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC237
: BC238/239
Emitter Base Breakdown Voltage
: BC237
: BC238/239
Collector Cut-off Current
: BC237
: BC238/239
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Base Capacitance
Noise Figure
: BC237/238
: BC239
: BC239
Test Condition
I
C
=2mA, I
B
=0
Min.
45
25
6
5
0.2
0.2
120
0.07
0.2
0.73
0.87
0.55
150
0.62
85
250
3.5
8
2
10
4
4
6
15
15
800
0.2
0.6
0.83
1.05
0.7
V
V
V
V
V
MHz
MHz
pF
pF
dB
dB
dB
Typ.
Max.
Units
V
V
V
V
nA
nA
BV
EBO
I
E
=1碌A(chǔ), I
C
=0
I
CES
V
CE
=50V, V
BE
=0
V
CE
=30V, V
BE
=0
V
CE
=5V, I
C
=2mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CE
=3V, I
C
=0.5mA, f=100MHz
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
EB
=0.5V, I
C
=0, f=1MHz
V
CE
=5V, I
C
=0.2mA,
f=1KHz R
G
=2K鈩?/div>
V
CE
=5V, I
C
=0.2mA
R
G
=2K鈩? f=30~15KHz
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
C
ib
NF
h
FE
Classification
Classification
h
FE
漏2002 Fairchild Semiconductor Corporation
A
120 ~ 220
B
180 ~ 460
C
380 ~ 800
Rev. A2, August 2002
1
2
3
4
