MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC182/D
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC182,A,B
BC183
BC184
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC
182
50
60
BC
183
30
45
6.0
100
350
2.8
1.0
8.0
鈥?55 to +150
BC
184
30
45
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 17
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
V(BR)CEO
BC182
BC183
BC184
V(BR)CBO
BC182
BC183
BC184
V(BR)EBO
ICBO
BC182
BC183
BC184
IEBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.2
0.2
0.2
鈥?/div>
15
15
15
15
nA
60
45
45
6.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
nA
50
30
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
V
Collector 鈥?Base Breakdown Voltage
(IC = 10
m
A, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 100
m
A, IC = 0)
Collector Cutoff Current
(VCB = 50 V, VBE = 0)
(VCB = 30 V, VBE = 0)
Emitter鈥揃ase Leakage Current
(VEB = 4.0 V, IC = 0)
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
BC183相關(guān)型號(hào)PDF文件下載
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TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-5
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1
2
3
4
