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BAT54/A/C/S

3

DISCRETE POWER AND SIGNAL

TECHNOLOGIES

CONNECTION DIAGRAMS

PACKAGE

SOT-23

TO-236AB (Low)

1

L4P

2

BAT54

3

3

BAT54A

1

2 NC

3

1

3

2

MARKING

BAT54 L4P BAT54C L43

BAT54A L42 BAT54S L44

BAT54C

BAT54S

1

2

1

2

Schottky Barrier Diode

Sourced from Process KA

Absolute Maximum Ratings*

Sym

T

stg

T

J

W

iv

I

F

i

f

i

F(surge)

P

D

TA = 25

O

C unless otherwise noted

Parameter

Storage Temperature

Operating Junction Temperature

Working Inverse Voltage

DC Forward Current (I

F

)

Recurrent Peak Forward Current (I

FRM

)

Peak Forward Surge Current (I

FSM

) Pulse Width = 1.0 Second

Total Power Dissipation at 25

O

C

Theta (R

th j-a) (Note 1

)

Value

-55 to +150

+150

25

200

300

600

230

430

Units

O

C

O

C

V

mA

mA

mA

mW

O

K/W

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

NOTES:

1) From junction to ambient mounted on a ceramic substrate of 10 mm x 8 mm x 0.6 mm

Electrical Characteristics

SYM

B

V

I

R

V

F

TA = 25

O

C unless otherwise noted

CHARACTERISTICS

Breakdown Voltage

Reverse Leakage

Forward Voltage

MIN

30

MAX

UNITS

V

I

R

I

F

I

F

I

F

I

F

I

F

TEST CONDITIONS

=

10 uA

25 V

2.0

240

320

400

500

1.0

10

5.0

uA

mV

mV

mV

mV

V

pF

ns

V

R

=

= 100 uA

= 1.0 mA

= 10 mA

= 30 mA

= 100 mA

1.0 V

1.0 MHz

C

T

T

RR

Capacitance

Reverse Recovery Time

V

R

=

f =

I

F

= I

R

= 10 mA

I

RR

= 1.0 mA

R

L

= 100 Ohms

漏 1997 Fairchild Semiconductor Corporation

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