BAT54/A/C/S
3
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
CONNECTION DIAGRAMS
PACKAGE
SOT-23
TO-236AB (Low)
1
L4P
2
BAT54
3
3
BAT54A
1
2 NC
3
1
3
2
MARKING
BAT54 L4P BAT54C L43
BAT54A L42 BAT54S L44
BAT54C
BAT54S
1
2
1
2
Schottky Barrier Diode
Sourced from Process KA
Absolute Maximum Ratings*
Sym
T
stg
T
J
W
iv
I
F
i
f
i
F(surge)
P
D
TA = 25
O
C unless otherwise noted
Parameter
Storage Temperature
Operating Junction Temperature
Working Inverse Voltage
DC Forward Current (I
F
)
Recurrent Peak Forward Current (I
FRM
)
Peak Forward Surge Current (I
FSM
) Pulse Width = 1.0 Second
Total Power Dissipation at 25
O
C
Theta (R
th j-a) (Note 1
)
Value
-55 to +150
+150
25
200
300
600
230
430
Units
O
C
O
C
V
mA
mA
mA
mW
O
K/W
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) From junction to ambient mounted on a ceramic substrate of 10 mm x 8 mm x 0.6 mm
Electrical Characteristics
SYM
B
V
I
R
V
F
TA = 25
O
C unless otherwise noted
CHARACTERISTICS
Breakdown Voltage
Reverse Leakage
Forward Voltage
MIN
30
MAX
UNITS
V
I
R
I
F
I
F
I
F
I
F
I
F
TEST CONDITIONS
=
10 uA
25 V
2.0
240
320
400
500
1.0
10
5.0
uA
mV
mV
mV
mV
V
pF
ns
V
R
=
= 100 uA
= 1.0 mA
= 10 mA
= 30 mA
= 100 mA
1.0 V
1.0 MHz
C
T
T
RR
Capacitance
Reverse Recovery Time
V
R
=
f =
I
F
= I
R
= 10 mA
I
RR
= 1.0 mA
R
L
= 100 Ohms
漏 1997 Fairchild Semiconductor Corporation
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