廬
BAS70-07S / BAS70-08S
RF DETECTION DIODE
FEATURES AND BENEFITS
s
s
s
LOW DIODE CAPACITANCE
LOW SERIES INDUCTANCE AND RESISTANCE
SURFACE MOUNT PACKAGE
DESCRIPTION
Dual and Triple Schottky diode in SOT323-6L
package. This diode is intented to be used in RF
application for signal detection and temperature
compensation.
BAS70-07S SCHEMATIC DIAGRAM
SOT323-6L
BAS70-08S SCHEMATIC DIAGRAM
1
2
3
6
5
4
1
2
3
6
5
4
ABSOLUTE RATINGS
(limiting values)
Symbol
V
R
I
F
I
FRM
I
FSM
P
T
stg
Tj
TL
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Surge non repetitive forward current
Power Dissipation
Storage temperature range
Maximum junction temperature
Maximum temperature for soldering
t
p
= 10 ms sinusoidal
Ta = 55擄C
Value
70
70
70
1
250
- 65 to +150
150
260
Unit
V
mA
mA
A
mW
擄C
擄C
擄C
December 2001 - Ed: 2A
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