BAS56
DUAL HIGH CURRENT
SWITCHING DIODE
Central
DESCRIPTION:
TM
Semiconductor Corp.
SOT-143 CASE
MAXIMUM RATINGS
(TA=25
o
C)
The CENTRAL SEMICONDUCTOR BAS56
type is an ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in an epoxy molded surface mount
package with isolated dual diodes, designed
for high current, high speed switching
applications.
Marking code is L51.
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1
碌sec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ,Tstg
螛
JA
60
60
200
600
4000
1000
350
-65 to +150
357
UNITS
V
V
mA
mA
mA
mA
mW
o
C
o
C/W
ELECTRICAL CHARACTERISTICS
(TA=25
o
C unless otherwise noted)
SYMBOL
IR
IR
IR
VF
VF
VF
CT
trr
Qs
VFR
VFR
TEST CONDITIONS
MIN
VR=60V
VR=60V, TA=150
o
C
VR=75V
IF=10mA
IF=200mA
IF=500mA
VR=0, f=1 MHz
IF=IR=400mA, RL=100鈩? Rec. to 40mA
IF=10mA, VR=5.0V, RL=500鈩?/div>
IF=400mA, tr=30ns
IF=400mA, tr=100ns
MAX
100
100
10
0.75
1.00
1.25
2.5
6.0
50
1.2
1.5
UNITS
nA
碌A(chǔ)
碌A(chǔ)
V
V
V
pF
ns
pC
V
V
60
1
2
