Surface Mount Switching Diode
COMCHIP
www.comchip.com.tw
BAS21
Voltage: 250 Volts
Current: 0.2Amp
Feature
High Voltage Switching Diode
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching
Applications
.119 (3.0)
.110 (2.8)
.020 (0.5)
SOT-23
Top View
.056 (1.40)
.047 (1.20
)
.006 (0.15)
.002 (0.05)
Mechanical Data
Case: SOT -23, Plastic
Terminals : Solderable per NIL-STD -202,
Method 208
Approx. Weight: 0.008 gram
.037(0.95) .037(0.95)
.006 (0.15)max.
.020 (0.5)
.020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
Maximum Ratings
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Surge Forward Current
Symbol
V
R
I
F
I
FSM
(surge)
Value
250
200.0
625
Units
V
DC
mAdc
mAdc
Thermal Characteristics
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Am bient
Total Device Dissipation Alumina Substrate,(2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Am bient
Junction and Storage Temperature
Symbol
P
D
R
JA
Max
225.0
1.8
556.0
300
2.4
417
鈥?5 to +150
Units
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
P
D
R
JA
T
J
, T
stg
Electrical Characterics
(TA = 25擄C unless otherwise noted)
Characteristic
Reverse Voltage Leakage Current
V
R
= 200 Vdc
V
R
= 200 Vdc, TJ = 150擄C
Reverse Breakdown Voltage (BR = 100 Adc)
Forward Voltage
F = 100 mAdc
F = 200 mAdc
Diode Capacitance (V
R
= 0, f = 1.0 MHz))
Reverse Recovery Time (I
F
= IR = 30 mAdc, RL = 100 )
1.FR鈥? = 1.0 X 0.75X 0.062 in.
2.Alumina = 0.4X 0.3X 0.024 in. 99.5% alumina.
Symbol
I
R
V(BR)
VF
C
D
Trr
Min
-
-
250
Max
1.0
100
-
1000
1250
5
50
.044 (1.10)
.035 (0.90)
Units
uAdc
Vdc
mV
pF
nS
MDS0209006A
Page 1
1
2
