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AF9902M

2N and 2P-Channel Enhancement Mode Power MOSFET

Features

- Simple Drive Requirement

- Low On-Resistance

- Full Bridge Application on LCD Monitor Inverter

- Pb Free Plating Product

General Description

The advanced power MOSFET provides the designer

with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The SO-8 package is universally preferred for all

commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC

converters.

Product Summary

CH

N

P

BV

DSS

(V)

30

-30

R

DS(ON)

(m鈩?

40

70

I

D

(A)

4.3

-3.3

Pin Assignments

N1G

N1D/P1D

N1S/N2S

N2G

1

2

3

4

8

7

6

5

Pin Descriptions

P1G

P1S/P2S

N2D/P2D

P2G

Pin Name

N1G

N1D/P1D

N1S/N2S

N2G

P2G

N2D/P2D

P1S/P2S

P1G

X

Packing

Description

Gate (NMOS1)

Drain(NMOS1) / Drain(PMOS1)

Source(NMOS1) / Source(NMOS2)

Gate (NMOS2)

Gate (PMOS2)

Drain(NMOS2) / Drain(PMOS2)

Source(PMOS1) / Source(PMOS2)

Gate (PMOS1)

SO-8

Ordering information

A X

Feature

F :MOSFET

PN

9902M X

Package

S: SO-8

Blank : Tube or Bulk

A : Tape & Reel

Block Diagram

P1S

P1G

P1N1D

N1G

N1S

N2S

P2N2D

N2G

P2S

P2G

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of

this product. No rights under any patent accompany the sale of the product.

Rev. 1.0 Sep 22, 2005

1/8

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