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AWT6277RM20P8 Datasheet

  • AWT6277RM20P8

  • HELP IMT/WCDMA 3.4 V/28.5 dBm Linear Power Amplifier Module

  • 8頁

  • ANADIGICS   ANADIGICS

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AWT6277R
HELP
TM
IMT/WCDMA 3.4 V/28.5 dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.2
FEATURES
鈥?/div>
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InGaP HBT Technology
High Efficiency:
44% @ P
OUT
= +28.5 dBm
21% @ P
OUT
= +16 dBm
16% @ P
OUT
= +7 dBm
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
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Low Quiescent Current: 15 mA
Low Leakage Current in Shutdown Mode: <1
碌A(chǔ)
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
鈩?/div>
System
Low Profile Miniature Surface Mount Package
Option: 1.1 mm Max
RoHS Compliant Package Option, 250
o
C MSL-3
HSDPA Compliant (no backoff)
Dual Band WCDMA Wireless Handsets
Dual Mode 3GPP Wireless Handsets
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.1 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
鈩?/div>
system.
AWT6277R
M20 Package
10 Pin 4 mm x 4 mm x 1.1 mm
Surface Mount Module
APPLICATIONS
PRODUCT DESCRIPTION
The AWT6277 meets the increasing demands for
higher output power in UMTS handsets. The PA module
is optimized for V
REF
= +2.85 V, a requirement for
compatibility with the Qualcomm廬 6250 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
GND at slug (pad)
V
CC
RF
IN
GND
1
2
3
Bias Control
10
V
CC
9
8
7
6
GND
RF
OUT
GND
GND
V
MODE
4
V
REF
5
Figure 1: Block Diagram
10/2005

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