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AU5517DR2G Datasheet

  • AU5517DR2G

  • Dual Operational Transconductance Amplifier

  • 14頁

  • ONSEMI

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NE5517, NE5517A, AU5517
Dual Operational
Transconductance Amplifier
The AU5517 and NE5517 contain two current-controlled
transconductance amplifiers, each with a differential input and
push-pull output. The AU5517/NE5517 offers significant design and
performance advantages over similar devices for all types of
programmable gain applications. Circuit performance is enhanced
through the use of linearizing diodes at the inputs which enable a
10 dB signal-to-noise improvement referenced to 0.5% THD. The
AU5517/NE5517 is suited for a wide variety of industrial and
consumer applications.
Constant impedance of the buffers on the chip allow general use of
the AU5517/NE5517. These buffers are made of Darlington
transistors and a biasing network that virtually eliminate the change of
offset voltage due to a burst in the bias current I
ABC
, hence eliminating
the audible noise that could otherwise be heard in high quality audio
applications.
Features
http://onsemi.com
MARKING
DIAGRAMS
1
SOIC鈭?6
D SUFFIX
CASE 751B
1
xx5517DG
AWLYWW
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Constant Impedance Buffers
DV
BE
of Buffer is Constant with Amplifier I
BIAS
Change
Excellent Matching Between Amplifiers
Linearizing Diodes
High Output Signal-to-Noise Ratio
Pb鈭扚ree Packages are Available*
1
PDIP鈭?6
N SUFFIX
CASE 648
1
NE5517yy
AWLYYWWG
Applications
Multiplexers
Timers
Electronic Music Synthesizers
Dolby廬 HX Systems
Current-Controlled Amplifiers, Filters
Current-Controlled Oscillators, Impedances
xx
yy
A
WL
YY, Y
WW
G
= AU or NE
= AN or N
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb鈭扚ree Package
PIN CONNECTIONS
N, D Packages
I
ABCa
1
D
a
2
+IN
a
3
鈭捍N
a
4
VO
a
5
V鈭?6
IN
BUFFERa
7
VO
BUFFERa
8
16
15
14
13
12
11
10
9
I
ABCb
D
b
+IN
b
鈭捍N
b
VO
b
V+
IN
BUFFERb
VO
BUFFERb
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
漏
Semiconductor Components Industries, LLC, 2006
1
April, 2006 鈭?Rev. 3
Publication Order Number:
NE5517/D

AU5517DR2G 產(chǎn)品屬性

  • 1

  • 集成電路 (IC)

  • Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps

  • -

  • 跨導(dǎo)

  • 2

  • 推挽式

  • 50 V/µs

  • 2MHz

  • -

  • 400nA

  • 400µV

  • 2.6mA

  • 650µA

  • 4 V ~ 44 V，±2 V ~ 22 V

  • -40°C ~ 125°C

  • 表面貼裝

  • 16-SOIC（0.154"，3.90mm 寬）

  • 16-SOIC

  • 剪切帶 (CT)

  • AU5517DR2GOSCT

AU5517DR2G相關(guān)型號(hào)PDF文件下載

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