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Description
The ATN3580 series of attenuator chips incorporate thin film
resistors on high resistivity silicon chips to achieve precision
attenuation, tight flatness and high return loss to 40 GHz. The
design uses a balanced TEE resistive structure to assure broad
bandwidth performance. The thin film technology offers improved
power handling capability in comparison to the traditional thick
film printed attenuator. All ATN3580 attenuator chips are
specified for their attenuation at DC. In addition, a wafer probe
sample test is performed to 40 GHz to assure meeting the
flatness specification. Skyworks鈥?measurements indicate that
attenuation typically increases with increasing frequency, as
shown in Figure 1.
Absolute Maximum Ratings
Characteristic
Incident power @ 25 擄C
Operating temperature
Storage temperature
Value
1W
-55 擄C to +175 擄C
-65 擄C to +200 擄C
Performance is guaranteed only under the conditions listed in the specifications table and is
not guaranteed under the full range(s) described by the Absolute Maximum specifications.
Exceeding any of the absolute maximum/minimum specifications may result in permanent
damage to the device and will void the warranty.
CAUTION:
Although this device is designed to be as robust as
possible, Electrostatic Discharge (ESD) can damage
this device. This device must be protected at all times
from ESD. Static charges may easily produce poten-
tials of several kilovolts on the human body or
equipment, which can discharge without detection.
Industry-standard ESD precautions must be employed
at all times.
Skyworks Solutions, Inc. 鈥?Phone [781] 376-3000 鈥?Fax [781] 376-3100 鈥?sales@skyworksinc.com 鈥?www.skyworksinc.com
200141 Rev.A 鈥?Skyworks Proprietary Information 鈥?Products and Product Information are Subject to Change Without Notice. 鈥?February 7, 2005
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