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ATF-58143-TR2G Datasheet

  • ATF-58143-TR2G

  • Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface M...

  • 10頁

  • AGILENT   AGILENT

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Agilent ATF-58143 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Surface Mount Plastic Package
Data Sheet
Features
鈥?Low noise and high linearity
performance
鈥?Enhancement Mode Technology
[1]
鈥?Excellent uniformity in product
specifications
Description
Agilent Technologies鈥檚
ATF-58143 is a high dynamic
range, low noise E-PHEMT
housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
The combination of high gain,
high linearity and low noise
makes the ATF-58143 ideal as
low noise amplifier for cellular/
PCS/WCDMA base stations,
wireless local loop, and other
applications that require low
noise and high linearity perfor-
mance in the 450 MHz to 6 GHz
frequency range.
Surface Mount Package
SOT-343
鈥?Low cost surface mount small
plastic package SOT-343 (4 lead
SC-70) in Tape-and-Reel packaging
option available
鈥?Lead-free option available
Specifications
2 GHz; 3V, 30 mA (Typ.)
Pin Connections and
Package Marking
鈥?30.5 dBm output 3
rd
order intercept
鈥?19 dBm output power at 1 dB
鈥?0.5 dB noise figure
SOURCE
8Fx
DRAIN
鈥?16.5 dB associated gain
Applications
鈥?Q1 LNA for cellular/PCS/WCDMA
base stations
鈥?Q1, Q2 LNA and Pre-driver
amplifier for 3鈥? GHz WLL
鈥?Other low noise and high linearity
applications at 450 MHz to 6 GHz
Note:
1. Enhancement mode technology requires
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
SOURCE
GATE
Note:
Top View. Package marking provides orientation
and identification
鈥?F鈥?= Device Code
鈥渪鈥?= Date code character
identifies month of manufacture.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.

ATF-58143-TR2G 產(chǎn)品屬性

  • ATF-58143

  • 10,000

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • pHEMT FET

  • 2GHz

  • 16.5dB

  • 3V

  • 100mA

  • 0.5dB

  • 30mA

  • 19dBm

  • 5V

  • SC-82A，SOT-343

  • SOT-343

  • 帶卷 (TR)

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