2鈥?8 GHz Ultra Low Noise
Pseudomorphic HEMT
Technical Data
ATF-36077
Features
鈥?PHEMT Technology
鈥?Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
鈥?High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
鈥?Low Parasitic Ceramic
Microstrip Package
鈥?Tape-and-Reel Packing
Option Available
Description
Hewlett-Packard鈥檚 ATF-36077 is
an ultra-low-noise Pseudomorphic
High Electron Mobility Transistor
(PHEMT), packaged in a low
parasitic, surface-mountable
ceramic package. Properly
matched, this transistor will
provide typical 12 GHz noise
figures of 0.5 dB, or typical 4 GHz
noise figures of 0.3 dB. Addition-
ally, the ATF-36077 has very low
noise resistance, reducing the
sensitivity of noise performance
to variations in input impedance
match, making the design of
broadband low noise amplifiers
much easier. The premium
sensitivity of the ATF-36077
makes this device the ideal choice
for use in the first stage of
extremely low noise cascades.
ASSOCIATED GAIN (dB)
77 Package
Pin Configuration
4
SOURCE
Applications
鈥?12 GHz DBS LNB (Low Noise
Block)
鈥?4 GHz TVRO LNB (Low Noise
Block)
鈥?Ultra-Sensitive Low Noise
Amplifiers
Note:
1. See Noise Parameter Table.
1
GATE
360
3
DRAIN
2
SOURCE
25
20
Ga
1.2
NOISE FIGURE (dB)
15
0.8
NF
[1]
10
The repeatable performance and
consistency make it appropriate
for use in Ku-band Direct Broad-
cast Satellite (DBS) Television
systems, C-band Television
Receive Only (TVRO) LNAs, or
other low noise amplifiers
operating in the 2-18 GHz
frequency range.
This GaAs PHEMT device has a
nominal 0.2 micron gate length
with a total gate periphery (width)
of 200 microns. Proven gold based
metalization systems and nitride
passivation assure rugged, reliable
devices.
5965-8726E
0.4
0
0
4
8
12
16
20
FREQUENCY (GHz)
Figure 1. ATF-36077 Optimum Noise
Figure and Associated Gain vs.
Frequency for V
DS
= 1.5 V, I
D
= 10 mA.
5-75
AGILENT
1
2
3
4
