2 鈥?16 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-26836
Features
鈥?High Output Power:
18.0 dBm Typical P
1 dB
at 12 GHz
鈥?High Gain:
9.0 dB Typical G
SS
at 12 GHz
鈥?Cost Effective Ceramic
Microstrip Package
鈥?Tape-and-Reel Packaging
Option Available
[1]
Description
The ATF-26836 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. This device is
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
36 micro-X Package
Electrical Specifications, T
A
= 25擄C
Symbol
G
SS
NF
O
G
A
P
1 dB
g
m
I
DSS
V
P
Parameters and Test Conditions
Tuned Small Signal Gain: V
DS
= 5 V, I
DS
= 30 mA
Optimum Noise Figure: V
DS
= 3 V, I
DS
= 10 mA
Gain @ NF
O
: V
DS
= 3 V, I
DS
= 10 mA
Power Output @ 1 dB Gain Compression:
V
DS
= 5 V, I
DS
= 30 mA
Transconductance: V
DS
= 3 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 3 V, I
DS
= 1 mA
f = 12.0 GHz
f = 12.0 GHz
f = 12.0 GHz
Units
dB
dB
dB
15.0
15
30
-3.5
Min.
7.0
Typ. Max.
9.0
2.2
6.0
18.0
35
50
-1.5
90
-0.5
f = 12.0 GHz dBm
mmho
mA
V
Note:
1. Refer to PACKAGING section 鈥淭ape-and-Reel Packaging for Surface Mount Semiconductors.鈥?/div>
5-67
5965-8704E
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